The authors successfully fabricated high-Tc ramp-type junctions with PrBa/sub 2/Cu/sub 3-x/Ga/sub x/O/sub 7-/spl delta// (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The I/sub c/R/sub n/ products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions.
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机译：作者成功地在PrBa / sub 2 / Cu / sub 3-x / Ga / sub x / O / sub 7- / spl delta //（PBCGO：x = 0.1，0.4）势垒下制造了高Tc斜坡型结。 MgO基材。这些结显示出电阻分流的约瑟夫逊结（RSJ）状I-V曲线，具有热激活和电压激活的电导率。这些结的I / sub c / R / sub n /乘积与Ga掺杂的比例很好。在高达12 mV（相当于6 THz）的情况下，可以观察到结对于100 GHz毫米波辐射的最大响应。使用远红外激光辐射，我们确认了这些结的太赫兹（THz）响应。这些结果表明斜波型约瑟夫森结的太赫兹波应用前景。
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