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Nondestructive magneto-optical characterization of natural andartificial defects on 3' HTSC wafers at liquid nitrogen temperature

机译:液氮温度下3“ HTSC晶片上自然和人工缺陷的无损磁光表征

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Double-sided 3" HTSC wafers were characterized by the magneto-optic technique. The presented apparatus allows a nondestructive and fast detection of local and extended inhomogeneities in the critical current density with high lateral resolution in the micrometer range. Additional gold-layers on the HTSC wafers, as they are sometimes used for the device production, do not influence the characterization result. The high sensitivity of the presented apparatus allows even the detection of local defects at higher temperature (77 K) where contrasts in the critical current are weaker and the magneto-optical characterization of HTSC thin films is much more difficult than at lower temperatures. So the apparatus can be used even under conditions where cooling with liquid helium or closed-cycle refrigerators is not available. The sensitivity was tested on natural and artificial defects, the latter being prepared by means of a focused laser beam
机译:双面3英寸HTSC晶片通过磁光技术进行了表征。所展示的设备可以无损,快速地检测出临界电流密度中的局部和扩展的不均匀性,并且在微米范围内具有较高的横向分辨率。由于HTSC晶圆有时会用于器件生产,因此不会影响表征结果,该仪器的高灵敏度甚至可以在较高温度(77 K)下检测局部缺陷,而在该温度下临界电流的对比度较弱且HTSC薄膜的磁光特性要比低温下困难得多,因此即使在没有使用液氦或闭环冷冻机冷却的条件下也可以使用该设备,并在自然和人工缺陷下进行了灵敏度测试。后者是通过聚焦激光束准备的

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