首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Temperature dependences of the surface resistance and thediamagnetic shielding susceptibility at Tc-T≪Tcfor high-Tc superconductors
【24h】

Temperature dependences of the surface resistance and thediamagnetic shielding susceptibility at Tc-T≪Tcfor high-Tc superconductors

机译:高Tc超导体Tc-T≪ Tc时表面电阻和抗磁屏蔽敏感性的温度依赖性

获取原文
获取原文并翻译 | 示例

摘要

At Tc-T≪≪Tc (i.e., near Tc), in order to demonstrate the conduction mechanism and temperature dependencies of the diamagnetic-shielding susceptibility and the penetration depth, we fabricated Ba1-xKxBiO 3 (BKBO) thin films and measured the energy gap by tunnel effect and shielding susceptibilities which are compared with those measured for BKBO and YBCO single crystals. The shielding susceptibilities for BKBO and YBCO crystals well-fit χ(T)/χ(0)=1-exp(-2Δ(T)/kBT), while that for the BKBO film follows χ(T)/χ(0)=(1-T/Tc) which may not be intrinsic. The exponential decrease of the susceptibilities near Tc indicates that the conduction mechanism is hopping. The energy gaps are observed as 2Δ(0)=(3.5±0.1)kBTc for the BKBO film by the tunnel effect, 2Δ(0)=(3.9±0.1)kBTc for the BKBO single crystal, and 2Δ(0)=(8±0.2)kBTc for the YBa2Cu3O7 single crystal. Furthermore, for microwave device applications of superconductors, at T c-T≪Tc, the surface resistance Rs(T)≈√(ωμ0/(2))/(σn +(σs(0)-σn)f(T)) is derived from the surface impedance at ωτtr≪, where σ s(0) and σn are the conductivities of the superconducting state and the normal state, respectively, and f(T)=χ(T)/χ(0)=(1-exp(-2Δ(T)/kBT))
机译:在Tc-T≪ Lt; Tc(即Tc附近),为了证明抗磁屏蔽磁化率和穿透深度的传导机理和温度依赖性,我们制作了Ba1-xKxBiO 3(BKBO)薄膜并测量了隧道效应和屏蔽磁化率的能隙与BKBO和YBCO单晶的测量结果比较。 BKBO和YBCO晶体的屏蔽敏感性很好地拟合χ(T)/χ(0)= 1-exp(-2Δ(T)/ kBT),而BKBO薄膜的屏蔽敏感性遵循χ(T)/χ(0) =(1-T / Tc)可能不是固有的。 Tc附近的磁化率呈指数下降,表明传导机制正在跳跃。通过隧道效应,BKBO膜的能隙为2Δ(0)=(3.5±0.1)kBTc,BKBO单晶的能隙为2Δ(0)=(3.9±0.1)kBTc,2Δ(0)=( YBa2Cu3O7单晶为8±0.2)kBTc。此外,对于超导体的微波器件应用,在T c-T≪ Tc处,表面电阻Rs(T)≈√(ωμ0/(2))/(σn+(σs(0)-σn)f(T) )是从ωτtr≪处的表面阻抗导出的,其中σs(0)和σn分别是超导状态和正常状态的电导率,f(T)=χ(T)/χ(0)=( 1-exp(-2Δ(T)/ kBT))

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利