Josephson-CMOS hybrid memory with ultra-high-speed interface circuit

摘要

In this paper we report our recent progress in realizing a Josephson-CMOS hybrid random-access memory. We have established a 4 K CMOS device model based on low-temperature experimental data on discrete MOS devices. We implemented an ultra-high-speed interface circuit to amplify millivolt-level Josephson input signals to volt-level signals for CMOS circuits. The interface circuit includes a Josephson series-array preamplifier and an ultra-fast hybrid Josephson-CMOS amplifier. Simulation and optimization of the interface circuit have predicted a delay of less than 60 ps. We have designed and fabricated the interface circuit using the 0.25 μm National Semiconductor Corporation (NSC) process for the CMOS chip, and the UC Berkeley 6.5 kA/cm2 Nb process for the Josephson junction (JJ) chip. The functionality of the interface circuit has been tested and proved by wire-bonding the CMOS chip to the JJ chip. We also demonstrate the design and fabrication of a model 64-kbit Josephson-CMOS hybrid memory; this circuit includes the ultra-high-speed interface, address buffers, word line decoders, 3 T DRAM-type cells, and Josephson sensing circuits; these are fabricated using the 0.25 μm NSC CMOS process and the UC Berkeley Nb process. Subnanosecond access time is predicted by a conservative simulation that used a room-temperature model for the CMOS. We plan a stacked-chip structure using very short wire bonding with which we will be able to measure subnanosecond access times.