Sputter deposition conditions and penetration depth in NbN thin films

摘要

NbN films have been reactively sputter deposited from a 15.24 cm Nb target using a variety of deposition conditions. Film penetration depth has been measured using Taber's parallel plate resonator technique. These measurements have been compared with penetration depth measurements obtained from SQUID measurements. Penetration depth results have also been correlated with film superconducting transition temperature, resistivity, resistance ratio, and x-ray diffraction patterns. The films have been deposited over a variety of substrates and buffer layers including oxidized Si, sapphire, and a variety of metal and metal nitride "seed" layers.