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Fabrication of all YBaCuO trilayer Josephson junctions with YBaCuO wiring layer

机译:使用YBaCuO布线层制造所有YBaCuO三层约瑟夫逊结

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We report a fabrication process of c-axis oriented all YBaCuO trilayer Josephson junctions with YBaCuO wiring layers. The trilayer junctions consisted of YBaCuO (170nm)/PrBaCuO (28 nm)/YBaCuO (170 nm) structures. CeO2 films (520nm) and YBaCuO films (1.2 μm) were used as insulating layers and wiring layers, respectively. A junction with a dimension of 7 μm×7 μm showed a critical current Ic of 1.6 mA and a junction resistance Rn of 1.2 Ω at 4.2 K. The values of the critical current density and the IcRn product were estimated to be 3.3kA/cm2 and 1.9 mV, respectively. Note that the junction exhibited IcRn product of 1.0 mV even at 30 K. From these results, the junction is promising candidate for satisfying the requirements for HTS integrated circuits.
机译:我们报告与YBaCuO布线层的c轴定向的所有YBaCuO三层约瑟夫逊结的制造过程。三层结由YBaCuO(170nm)/ PrBaCuO(28 nm)/ YBaCuO(170 nm)结构组成。使用CeO2膜(520nm)和YBaCuO膜(1.2μm)分别作为绝缘层和布线层。尺寸为7μm×7μm的结在4.2 K时显示1.6 mA的临界电流Ic和1.2Ω的结电阻Rn。临界电流密度和IcRn乘积的值估计为3.3kA / cm2和1.9 mV。注意,即使在30 K时,结也显示出1.0 mV的IcRn乘积。从这些结果来看,结是满足HTS集成电路要求的有希望的候选者。

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