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Mechanisms of limitation and nature of field dependence of critical current in HTS epitaxial YBaCuO films

机译:HTS外延YBaCuO薄膜临界电流的限制机理和场依赖性。

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Magnetic field and temperature dependencies of the critical current density, J/sub c/(H/spl par/c, T) were measured by SQUID-magnetometry, ac magnetic susceptibility, and dc transport current techniques in the single-crystalline epitaxially-grown by off-axis dc magnetron sputtering YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) films with J/sub c/(H/spl par/c, 77 K) /spl ges/ 2 /spl middot/ 10/sup 6/ A/cm/sup 2/. The mechanism of vortex depinning from growth-induced linear defects, i.e., out-of-plane edge dislocations in low-angle tilt domain boundaries, is shown to describe quantitatively measured J/sub c/(H/spl par/c, T). The developed model takes into account a statistical distribution of the dislocation domain boundaries ordered in a network as well as the interdislocation spacing within boundaries. Actual structural features of YBCO film known from HREM data turn out to be extracted from J/sub c/(H/spl par/c, T)-curves by a fitting procedure within the proposed model.
机译:临界电流密度J / sub c /(H / spl par / c,T)的磁场和温度依赖性通过SQUID磁强法,交流磁化率和直流输运电流技术在单晶外延生长中测量通过离轴直流磁控溅射YBa / sub 2 / Cu / sub 3 / O / sub 7- / spl delta //(J / sub c /(H / spl par / c,77 K)/ spl的(YBCO)膜ges / 2 / spl middot / 10 / sup 6 / A / cm / sup 2 /。涡旋从生长引起的线性缺陷中脱钉的机制,即低角度倾斜域边界中的平面外边缘位错,显示出描述了定量测量的J / sub c /(H / spl par / c,T) 。开发的模型考虑了网络中位错域边界的统计分布以及边界内的位错间距。从HREM数据获知的YBCO薄膜的实际结构特征证明是通过拟议模型内的拟合程序从J / sub c /(H / spl par / c,T)曲线提取的。

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