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Critical current density of HTS single crystal YBCO thin films in applied dc field

机译:高温直流下HTS单晶YBCO薄膜的临界电流密度

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Magnetic field and angle dependencies of critical current density J/sub c/(H,/spl theta/) are measured for single-crystal c-oriented epitaxial YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// thin films with high J/sub c//spl ap/2 MA/cm/sup 2/ at 77 K. Films are deposited by off-axis dc magnetron sputtering onto r-cut sapphire substrates buffered with CeO/sub 2/. Experimental evidences of the dominant contribution of extended linear defects (growth-induced out-of-plane edge dislocations) to pinning mechanism and critical current behavior are presented. A consistent model of vortex lattice depinning from a linear defect system is developed. Detailed J/sub c/(H) measurements start from very low fields (<0.001 T). Qualitatively different angle dependencies J/sub c/(/spl theta/) are obtained in different field ranges. Their evolution is comprehended on the base of depinning model. The "peak-effect" observed in J/sub c/(H)-dependencies at parallel magnetic field is discussed as a contribution of electromagnetic pinning.
机译:对于单晶c取向外延YBa / sub 2 / Cu / sub 3 / O / sub 7- / spl delta,测量了临界电流密度J / sub c /(H,/ spl theta /)的磁场和角度依赖性//在77 K时具有高J / sub c // spl ap / 2 MA / cm / sup 2 /的薄膜。通过离轴dc磁控溅射将膜沉积到用CeO / sub 2 /缓冲的r切割蓝宝石衬底上。提出了扩展的线性缺陷(生长引起的面外边缘错位)对钉扎机制和临界电流行为的主要贡献的实验证据。建立了线性缺陷系统中旋涡晶格脱钉的一致模型。详细的J / sub c /(H)测量从非常低的场(<0.001 T)开始。在不同的视场范围内获得定性不同的角度依赖性J / sub c /(// spl theta /)。他们的发展是基于固定模型的。讨论了在J / sub c /(H)依赖性中在平行磁场下观察到的“峰值效应”,这是电磁钉扎的作用。

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