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Inductive measurement of in-field critical current density of YBCO thin film on a SrTiO_3 bicrystal substrate using the third harmonic voltage method

机译:三次谐波电压法感应测量SrTiO_3双晶衬底上YBCO薄膜的场内临界电流密度

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摘要

The spatial distribution and the magnetic field dependence of the critical current density J_c for a YBa_2Cu_3Oy (YBCO) thin film deposited on a SrTiO_3 (STO) bicrystal substrate have been investigated using the third harmonic voltage method. When a pick-up coil is mounted on the area without a crystal grain-boundary, the third harmonic voltage V_3 increases monotonically with increasing coil current I_0 over a certain threshold value. On the other hand, when the pick-up coil is mounted on the area with a crystal grain-boundary, the V _3-I_0 curve shows a strange behavior. However, the V _3-I_0 curves show a monotonic increase when a magnetic field over 0.07T is applied to the YBCO thin film, because the shielding current hardly flows across the crystal grain-boundary in the large magnetic field. The magnetic field dependence of J_c is also measured using the four-probe method to clarify the strange behavior of the V_3-I _0 curve in the third harmonic voltage method.
机译:使用三次谐波电压法研究了沉积在SrTiO_3(STO)双晶衬底上的YBa_2Cu_3Oy(YBCO)薄膜的临界电流密度J_c的空间分布和磁场依赖性。当将拾取线圈安装在没有晶粒边界的区域上时,三次谐波电压V_3随着线圈电流I_0超过某个阈值而单调增加。另一方面,当将拾取线圈安装在具有晶粒边界的区域上时,V _3-I_0曲线显示出奇怪的行为。但是,当在YBCO薄膜上施加超过0.07T的磁场时,V _3-I_0曲线显示出单调增加,这是因为在大磁场中屏蔽电流几乎不流过晶粒边界。还使用四探针方法测量J_c的磁场依赖性,以阐明三次谐波电压方法中V_3-I _0曲线的奇怪行为。

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