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Analysis and Simulation of the Effects of Distributed Nonlinearities in Microwave Superconducting Devices

机译:微波超导器件中分布非线性效应的分析与仿真

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This paper presents a comprehensive study of microwave nonlinearities in superconductors, with an emphasis on intermodulation distortion and third-harmonic generation. It contains the analysis of various resonant and nonresonant test devices and its validation using numerical simulations based on harmonic balance (HB). The HB simulations made on test devices show that the closed-form equations for intermodulation and third-harmonic generation are only valid at low power levels. The paper also contains examples of application of HB to illustrate that this technique is useful to simulate superconductive devices other than simple test devices, and that the validity of the simulations is not restricted to low drive power levels. Most of the analyses and simulations of this paper are based on electrical parameters that describe the nonlinearities in the superconducting material. These parameters are compatible with many existing models of microwave nonlinearities in superconductors. We discuss the particulars on how to relate these electrical parameters with one of the existing models that postulates that the nonlinear effects are due to a dependence of the penetration depth on the current density in the superconductor.
机译:本文对超导体中的微波非线性进行了全面的研究,重点是互调失真和三次谐波的产生。它包含各种谐振和非谐振测试设备的分析,以及使用基于谐波平衡(HB)的数值模拟进行的验证。在测试设备上进行的HB仿真表明,互调和三次谐波生成的闭式方程式仅在低功率水平下有效。本文还包含HB应用的示例,以说明该技术可用于模拟除简单测试设备以外的超导设备,并且模拟的有效性并不局限于低驱动功率水平。本文的大多数分析和模拟都是基于描述超导材料非线性的电参数。这些参数与超导体中许多现有的微波非线性模型兼容。我们讨论了如何将这些电参数与现有模型之一相关的细节,该模型假定非线性效应是由于穿透深度对超导体中电流密度的依赖性所致。

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