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Intrinsic Josephson Junctions in Bi-2212 Thin Films Fabricated by Metal-Organic Decomposition

机译:金属有机分解制备的Bi-2212薄膜的本征约瑟夫森结

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We fabricated a mesa $10 mu{rm m}times 10 mu{rm m}$ in area and $sim$150 nm in height on a single grain in a 240-nm ${rm Bi}_{2}{rm Sr}_{2}{rm CaCu}_{2}{rm O}_{8+delta}/{rm MgO}$ thin-film grown by metal-organic decomposition (MOD) with face-to-face annealing. A multi-branch structure peculiar to intrinsic Josephson junctions (IJJs) was observed in the $I-V$ characteristics of the fabricated mesa, and this structure was characterized by approximately 100 quasiparticle branches with critical current densities of 1 ${rm kA/cm}^{2}$ and voltage-jump intervals of 20 mV. Moreover, the temperature dependence of the critical current was in good agreement with a theoretical result based on $c$ -axis Josephson tunneling in $d$-wave superconductors. These results imply that the thin films grown by MOD have sufficient quality to fabricate IJJs for practical terahertz applications.
机译:我们在240nm的{rm Bi} _ {2} {rm Sr} _上的单个晶粒上制造了一个台面$ 10μm{rm m}乘以10μm{rm m} $的面积和$ sim $ 150 nm的高度。 {2} {rm CaCu} _ {2} {rm O} _ {8 + delta} / {rm MgO} $薄膜是通过金属有机分解(MOD)和面对面退火而生长的。在制造的台面的$ IV $特性中观察到固有约瑟夫逊结(IJJs)特有的多分支结构,并且该结构的特征在于大约100个准粒子分支,其临界电流密度为1 $ {rm kA / cm} ^。 {2} $和20 mV的跳电压间隔。此外,临界电流的温度依赖性与基于$ d $波超导体中$ c $轴约瑟夫森隧穿的理论结果非常吻合。这些结果表明,通过MOD生长的薄膜具有足够的质量来制造用于实际太赫兹应用的IJJ。

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