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High quality and low loss surface acoustic wave SAW resonator based on chromium-doped AlN on sapphire

机译:基于蓝宝石的铬掺杂Aln的高质量和低损耗表面声波SAW谐振器

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摘要

This paper aims to investigate the performances of surface acoustic wave (SAW) resonators based on chromium-doped aluminum nitride (AlCrN) piezoelectric thin film on c-cut sapphire substrate. The electromechanical properties of AlCrN (mass density, elastic, dielectric and piezoelectric constants) are obtained from density functional theory calculations for different Cr-doping concentrations. Piezoelectricity is enhanced for Al_(1-x)Cr_xN with different x concentrations. Using finite element analysis, the electroacoustic parameters such as phase velocity, electromechanical coupling factor K~2 of surface acoustic modes are determined for different AlCrN thickness-to-wavelength ratios and different Cr-doping concentrations. Higher order SAW modes arise at Cr concentration x = 25%. The electrical admittance and scattering parameter S_(21) for the fundamental SAW modes are determined. High K~2, low loss and high-quality factor are found after incorporating Cr dopant. The comparison of the obtained results with the available numerical and experimental data on AIN doped with Scandium Sc has shown a considerable improvement of SAW devices characteristics, confirming that AlCrN can be adopted as a new piezoelectric material for high performances SAW devices.
机译:本文旨在探讨基于C-Cut蓝宝石衬底上的铬掺杂氮化铝(Alcrn)压电薄膜的表面声波(SAW)谐振器的性能。 Alcrn(质量密度,弹性,电介质和压电常数)的机电性能从密度函数理论计算获得不同的CR掺杂浓度。具有不同X浓度的Al_(1-x)Cr_xn增强压电性。使用有限元分析,针对不同的ALCRN厚度与波长比和不同的CR掺杂浓度确定表面声学模式的电声参数,例如相速度,机电耦合因子K〜2。高阶锯模式在Cr浓度x = 25%时出现。确定了基本锯模式的电气导纳和散射参数S_(21)。在加入CR掺杂剂后发现高K〜2,低损耗和高质量因子。获得的结果与掺杂有钪SC的AIN的可用数值和实验数据的比较显示了SAW器件特性的显着改善,确认可以采用Alcrn作为高性能锯装置的新型压电材料。

著录项

  • 来源
    《Applied Physics》 |2021年第4期|255.1-255.11|共11页
  • 作者单位

    Research Center in Industrial Technologies CRTI P.O. Box 64 16014 Cheraga Algiers Algeria;

    Research Unit in Optics and Photonics (UROP-CDTA) University of Setif 1 El-Bez 19000 Setif Algeria;

    Institute for Photonics and Nanotechnologies IFN-CNR Via Cineto Romano 42 00156 Rome Italy;

    Laboratory of Materials Physics Faculty of Physics University of Sciences and Technology - Houari Boumediene (U.S.T.H.B.) El-Alia Po. Box 32 DZ-16111 Bab-Ezzouar Algiers Algeria;

    Research Unit in Optics and Photonics (UROP-CDTA) University of Setif 1 El-Bez 19000 Setif Algeria;

    Research Unit in Optics and Photonics (UROP-CDTA) University of Setif 1 El-Bez 19000 Setif Algeria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ab initio calculations; Finite element method; Electroacoustic devices; AlCrN; Surface acoustic wave;

    机译:AB Initio计算;有限元法;电声器件;alcrn;表面声波;

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