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机译:光照对Al_xGa_(1-x)N / GaN异质结构中子带结构和占有的影响
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
Ⅲ-Ⅴ semiconductors; electron states at surfaces and interfaces; magnetoresistance; quantum wells; landau levels;
机译:具有单个子带占据的极化掺杂Al_xGa_(1-x)N / GaN异质结构中的弱反定位
机译:光照对具有强自旋轨道耦合的Al_xGa_(1-x)N / GaN异质结构中弱抗局部化的影响
机译:照度对Al_xGa_(1-x)N / GaN异质结构中二维电子气自旋分裂的影响
机译:子带间散射对调制掺杂的Al_xGa_(1-x)N / GaN异质结构的影响
机译:II-VI DMS异质结构的磁光研究:锌(1-xy)锰(x)镉(y)硒/锌(1-x)锰(x)硒单量子阱,锌(1-x)镉( x)硒/锌(1-y)锰(y)硒I型和硒化镉/碲化锌的II型超晶格。
机译:表面钝化对超薄AlN / GaN异质结构场效应晶体管中AlN势垒应力和散射机理的影响
机译:InxAl1-xN / AlN / \ ud中二维电子气的双子带占据 铟含量低(0.064≤x≤0.140)的GaN / AlN异质结构
机译:Gaas-Ga(1-x)alxas异质结构中二维空穴气体的磁输运特性和子带结构