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机译:照度对Al_xGa_(1-x)N / GaN异质结构中二维电子气自旋分裂的影响
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
level splitting and interactions; Ⅲ-Ⅴ semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; galvanomagnetic and other magnetotransport effects (including thermomagnetic effects);
机译:极化诱导的二维电子气在Al_xGa_(1-x)N / AlN / GaN异质结构中的弱反定位和零场电子自旋分裂
机译:Al_xGa_(1-x)N厚度对调制掺杂的Al_xGa_(1-x)N / GaN单异质结构中二维电子气输运性质的影响
机译:金属有机气相外延生长的Al_xGa_(1-x)N / AlN / GaN异质结构中二维电子气系统的照明和退火特性
机译:照明对AI_XGA_(1-X)N / GaN异质结构的二维电子气体自旋分裂的影响
机译:GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
机译:栅极长度与漏极-源极距离之比对AlGaN / AlN / GaN异质结构场效应晶体管中电子迁移率的影响
机译:极化诱导的二维电子气在AlxGa1-xN ∕ AlN ∕ GaN异质结构中的弱反定位和零场电子自旋分裂