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首页> 外文期刊>Physica status solidi >Influence of the illumination on the spin splitting of the two-dimensional electron gas in Al_xGa_(1-x)N/GaN heterostructures
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Influence of the illumination on the spin splitting of the two-dimensional electron gas in Al_xGa_(1-x)N/GaN heterostructures

机译:照度对Al_xGa_(1-x)N / GaN异质结构中二维电子气自旋分裂的影响

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摘要

Spin splitting of the two-dimensional electron gas (2DEG) in Al_xGa_(1-x)N/GaN heterostmctures has been investigated by means of magnetotransport measurements under the illumination at low temperatures. The beating patterns in the oscillatory magnetoresistance originating from zero-field spin splitting of the 2DEG are observed in this study. It is found thatrnthe spin splitting energy decreases after the illumination. It is also found that the illumination decreases the electric field at Al_xGa_(1-x)N/GaN heterointerfaces. Based on the experiments, it is suggested that the zero-field spin splitting of the 2DEG in Al_xGa_(1-x)N/GaN heterostructures mainly arises from the Rashba effect.
机译:通过在低温照明下的磁迁移测量研究了Al_xGa_(1-x)N / GaN异质结构中二维电子气(2DEG)的自旋分裂。在这项研究中观察到源自2DEG的零场自旋分裂的振荡磁阻中的跳动模式。发现自旋分裂能在光照后降低。还发现照明降低了Al_xGa_(1-x)N / GaN异质界面处的电场。根据实验表明,Al_xGa_(1-x)N / GaN异质结构中2DEG的零场自旋分裂主要是由Rashba效应引起的。

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  • 来源
    《Physica status solidi》 |2008年第6期|2339-2341|共3页
  • 作者单位

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

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  • 正文语种 eng
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  • 关键词

    level splitting and interactions; Ⅲ-Ⅴ semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; galvanomagnetic and other magnetotransport effects (including thermomagnetic effects);

    机译:等级划分和互动;Ⅲ-Ⅴ半导体与半导体的接触;p-n结和异质结;电磁和其他磁传输效应(包括热磁效应);

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