Morphological characterization of porous GaP prepared by electrochemical etching

摘要

In this study, the formation of porous GaP obtained by a constant potential anodic process has been investigated. The pore morphology and porous layer structure strongly depend on the electrochemical conditions. For an-odization with an applied potential at 24.5 V in nitric organic electrolyte at room temperature, regular superlattices can be formed on the GaP crystal surface. In comparison to anodization of GaP with other traditional electrolytes, this anodic process with the nitric acid system adulterated with organic solvent can more effectively produce varied porous morphologies.