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机译:ZnO种子层对n-ZnO纳米结构/ p-GaN LED的影响
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China;
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China;
机译:原子层沉积生长的n-ZnO / p-GaN异质结LED的紫外电致发光和结构
机译:通过优化MgO隔离层的厚度使n-ZnO / i-ZnO / p-GaN异质结发光二极管的局部表面等离子体增强紫外电致发光
机译:通过从ZnO和GaN侧面的观察重新发现i层在n-ZnO / SiO_2 / p-GaN中的作用
机译:远程等离子体原子层沉积生长的n-ZnO:N / p-GaN异质结LED的局部电子结构和UV电致发光
机译:具有和不具有界面层的n-ZnO / p-Si单异质结太阳能电池的开发。
机译:在通过原子层沉积形成的种子层上生长的化学调谐分层ZnO纳米结构的光电流检测
机译:RF溅射沉积的N-ZnO薄膜和N-ZnO / P-GaN异质结LED的性质