Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan,Republic of China;
Protrustech Corporation Limited, Tainan, Taiwan, Republic of China;
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan,Republic of China,Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan, Republic of China;
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan,Republic of China,Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei,Taiwan, Republic of China;
机译:原子层沉积生长的n-ZnO / p-GaN异质结LED的紫外电致发光和结构
机译:来自N-ZnO / P-GaN异质结的可调谐电致发光,通过脉冲激光沉积生长的CSPBBR(3)中间层
机译:远程等离子体原位原子层掺杂制备的氮控ZnO薄膜的局部电子结构和电学特性
机译:N-ZNO的局部电子结构和紫外线电致发光:通过远程等离子体原子层沉积生长的N / P-GaN异质结LED
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:等离子增强原子层沉积法生长的电力电子应用氮化铝过渡层
机译:来自P-GaN / N-ZnO Nanorod异质结的缺陷辅助调谐电致发光