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Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II

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1.Recent Reliability Progress of GaN HEMT Power Amplifiers

机译：GaN HEMT功率放大器最近的可靠性进展
- 作者：Toshihiro Ohki;Masahito Kanamura;Yoichi Kamada;Kozo Makiyama;Yusuke Inoue;Naoya Okamoto;Kenji Imanishi;Kazukiyo Joshin;Toshihide Kikkawa
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
2.Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

机译：垂直腔表面发射激光器可靠性和常见故障机制的设计
- 作者：Robert W. Herrick
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
3.GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms

机译：GaN HEMT可靠性：从时间依赖的栅极劣化到导通状态故障机制
- 作者：Enrico Zanoni;Gaudenzio Meneghesso;Matteo Meneghini;Antonio Stocco
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
4.8 MeV Proton Irradiation Damage and Its Recovery by Annealing on Single-Crystalline Zinc Oxide Crystals

机译：通过退火对单晶锌晶体退火的8MeV质子辐照损伤及其恢复
- 作者：Kazuto Koike;Ryugo Fujimoto;Ryota Wada;Shigehiko Sasa;Mitsuaki Yano;Shun-ichi Gonda;Ryoya Ishigami;Kyo Kume
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
5.An easy approach to identify dislocation types in GaN films through selective chemical etching and atom force microscopy

机译：通过选择性化学蚀刻和原子力显微镜识别GaN薄膜中脱位类型的简单方法
- 作者：Guoqiang Li;Hui Yang
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
6.Highly Reliable 1016nm Vertical Cavity Surface Emitting Lasers (VCSELs) For Optical Interconnect

机译：用于光学互连的高度可靠的1016nm垂直腔表面发射激光器（VCSELS）
- 作者：S. Kamiya;K. Takaki;S. Imai;J. Yoshida;M. Funabashi;Y. Kawakita;K. Hiraiwa;T.Suzuki;H. Shimizu;N. Tsukiji;T. Ishikawa;A. Kasukawa
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
7.TEM Study on Defects in Epitaxial CdZnTe Films Deposited on (001)GaAs by Close-Spaced Sublimation

机译：通过近距离间隔升华沉积（001）GaAs沉积的外延Cdznte薄膜缺陷的TEM研究
- 作者：Junning Gao;Wanqi Jie;Lin Luo;Yanyan Yuan;Tao Wang;Shouzhi Xi;Hui Yu
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
8.Enhanced Light Absorption in Textured Metal Organic Chemical Vapour Deposited (MOCVD) CdO Thin Films

机译：增强纹理金属有机化学气相沉积（MOCVD）CDO薄膜的光吸收
- 作者：Sunday O. Adekoya;Marcus A. Eleruja;Bolutife Olofinjana;Olumide O. Akinwunmi;Bidini A. Taleaitu;Ezekiel O. B. Ajayi
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
9.Free standing GaN nano membrane by laser lift-off method

机译：通过激光剥离方法自由常设GaN纳米膜
- 作者：Liang Tang;Yuefeng Wang;Gary Cheng;Michael J. Manfra;Timothy D.Sands
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
10.Ga-vacancy activation under low energy electron irradiation in GaN-based materials

机译：GaN基材料低能电子照射下的GA空位激活
- 作者：Henri Nykanen;Sami Suihkonen;Lucasz Kilanski;Markku Sopanen;Filip Tuomisto
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
11.Temperature Dependent Characterization of Imbedded InAs Quantum Dots in GaAs Superlattice Solar Cell Structures by High Resolution X-ray Diffraction

机译：高分辨率X射线衍射GaAs超晶格太阳能电池结构嵌入式INAS量子点的温度依赖性表征
- 作者：Josephine J. Sheng;David. C. Chapman;David M. Wilt;Stephen J. Polly;Christopher G.Bailey;Christopher Kerestes;Seth M. Hubbard;Sang M. Han
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
12.Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

机译：使用光学泵送作为表征方法的AlGaN / GaN HEMT可靠性的测定
- 作者：D. Cheney;R. Deist;B. Gila;F. Ren;P. Whiting;J. Navales;E. Douglas;S. Pearton
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
13.Characterization of rf-sputtered HfMgZnO thin films

机译：RF溅射HFMGZNO薄膜的表征
- 作者：Hantsun Chung;Jian-Zhang Chen;I-Chun Cheng
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
14.Study of the Deep Levels of a GaAs/p-GaAs_(1-χ)Bi_χ Heterostructure Grown by Molecular Beam Epitaxy

机译：通过分子束外延生长的GaAs / P-GaAs_（1-Ⅵ）Bi_χ异质结构的深度研究
- 作者：Takuma Fuyuki;Shota Kashiyama;Kunishige Oe;Masahiro Yoshimoto
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
15.Assessment of Photovoltaic Junction Position in CdTe Solar Cells Using a Combined FIB-EBIC Technique

机译：使用联合FIB-EBIC技术评估CDTE太阳能电池的光伏结位置
- 作者：Jonathan D. Major;Leon Bowen;Robert E. Treharne;Ken Durose
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
16.Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AIGaN/GaN HEMTs

机译：Al Mole分数在散装和表面状态诱导的Aigan / GaN Hemts诱导不稳定性的影响
- 作者：S. DasGupta;M. Sun;A. Armstrong;R. Kaplar;M. Marinella;J. Stanley;M. Smith;S.Atcitty;T. Palacios
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
17.Influence of Post Growth Annealing on the Optical Properties of Gallium Nitride Films Grown by Pulsed Laser Deposition

机译：后生长退火对脉冲激光沉积生长氮化镓膜光学性质的影响
- 作者：M. Baseer Haider;M. F. Al-Kuhaili;S. M. A. Durrani;Imran Bakhtiari
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
- GaN;
- PLD;
- nitride semiconduct ors;
- XPS;
- transmittance spectra;
- optical constants;
18.Characteristics of polarization emission in α-plane GaN-based multiple quantum wells structures

机译：α平面GaN的多量子阱结构偏振发射特征
- 作者：Chiao-Yun Chang;Huei-Min Huang;Tien-Chang Lu;Hao-Chung Kuo;Shing-Chung Wang;Chih Ming Lai
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
19.Absence of Lateral Composition Fluctuations in Aberration-corrected STEM Images of an InGaN Quantum Well at Low Dose

机译：在低剂量下缺乏indaN量子的像差校正茎图像的横向组成波动
- 作者：Andrew B. Yankovich;A. V. Kvit;X. Li;F. Zhang;V. Avrutin;H.Y. Liu;N. Izyumskaya;UE. OEzguer;H. Morkoc;P. M. Voyles
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
20.Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects

机译：在深层缺陷中连续多光载波中的反馈和通胀机制
- 作者：Kei Suzuki;Masaki Wakita;Yuzo Shinozuka
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
21.The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

机译：N型氮化镓内穿线脱位线的占用：最近的进展
- 作者：Erfan Baghani;Stephen K. OLeary
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
22.Chemical Vapor Deposition of Boron Phosphide Thin Films

机译：硼磷化薄膜的化学气相沉积
- 作者：Julia K.C. Abbott;J. Daniel Brasfield;Philip D. Rack;Gerd J. Duscher;Charles S. Feigerle
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
23.High-lrradiance Degradation Studies of Metamorphic leV Gain As Solar Cells

机译：变质lev增益作为太阳能电池的高兴力劣化研究
- 作者：Ryan M. France;Myles A. Steiner
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
24.Thermomechanical modelling of high power laser diode degradation

机译：高功率激光二极管劣化的热机械建模
- 作者：J. Anaya;A.Martin-Martin;J. Souto;P.Iniguez;J. Jimenez
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年
25.Local Electronic Structure and UV Electroluminescence of n-ZnO:N/p-GaN Heterojunction LEDs Grown by Remote Plasma Atomic Layer Deposition

机译：N-ZNO的局部电子结构和紫外线电致发光：通过远程等离子体原子层沉积生长的N / P-GaN异质结LED
- 作者：Jui F. Chien;Ching H. Chen;Jing J. Shyue;Miin J. Chen
- 会议名称：《Symposium on reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II》 | 2012年