X-ray topography study of monocrystalline silicon wafers diffused with phosphorus by different methods

摘要

To reduce the cost of the emitter diffusion process, there has been increasing interest to substitute the standard process of batch POCl_3 emitter diffusion used in the silicon solar-cell manufacturing industry with in-line diffusion processes such as the spray-on and screen-printing process. For this reason, it is essential to study and compare the processes of different diffusion methods from the point of view of the crystalline quality of the final wafers. X-ray transmission topography was employed to characterize the possible precipitates and other microdefects generated in Czochralski-grown silicon (Cz Si) during the emitter diffusion process carried out by screen-printing, spray-on and the standard process, in which the emitter was provided by a liquid (POCl_3) source. The results indicate that the phosphorus diffusion process influences the crystalline quality of the wafers and the efficiency of the external get-tering process that takes place during phosphorus diffusion depends on the diffusion method employed.