X-Ray Topography Study of Complex Silicon Microcircuits

摘要

The correlation between the yield of silicon microcircuits wafers versus defects observed in X-ray topographs produced by a high speed curved wafer X-ray topographic camera was investigated. Most of the topographs were made after final wafer probe. Results indicated that most high volume silicon wafer processing does not need X-ray topography as a routine process control. It is further indicated that in changing any existing process or developing a new process the technique can be of significant benefit.