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Time evolution of the infrared laser ablation plasma plume of SiO

机译:SiO 2红外激光烧蚀等离子体羽的时间演化

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摘要

The spatio-temporal evolution of the silicon monoxide SiO plasma produced by a high-power CO_2 pulsed laser has been investigated using optical emission spectroscopy (OES) and imaging methods. The formed plasma was found to be strongly ionized, yielding Si~+, O~+, Si~(2+), O~(2+) and Si~(3+) species, rich in neutral silicon and oxygen atoms, and very weak molecular bands of SiO time-integrated and time-resolved two-dimensional OES plasma profiles were recorded as a function of emitted wavelength and distance from the target. The temporal behavior of specific emission lines of Si, Si~+, O~+, Si~(2+) and O~(2+) was characterized. The results show a faster decay of O~(2+) and Si~(2+) than that of O~+, Si~+ and Si. The Stark broadening of isolated single-ionized silicon emission lines was employed for deducing the electron density during the plasma expansion. The relative intensities of two Si~(2+) lines were used to calculate the time evolution of the plasma temperature.
机译:使用光发射光谱法(OES)和成像方法研究了由高功率CO_2脉冲激光产生的一氧化硅SiO等离子体的时空演化。发现形成的等离子体被强电离,产生富含中性硅和氧原子的Si〜+,O〜+,Si〜(2 +),O〜(2+)和Si〜(3+)物种,并且SiO时间积分和时间分辨的二维OES等离子体轮廓的非常弱的分子带记录为发射波长和距目标的距离的函数。表征了Si,Si〜+,O〜+,Si〜(2+)和O〜(2+)特定发射线的时间行为。结果表明,O〜(2+)和Si〜(2+)的衰减快于O〜+,Si〜+和Si的衰减。隔离的单电离硅发射线的斯塔克展宽用于推导等离子体膨胀期间的电子密度。用两条Si〜(2+)线的相对强度来计算等离子体温度的时间演化。

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  • 来源
    《Applied Physics 》 |2014年第1期| 125-129| 共5页
  • 作者单位

    Institute de Estructura de la Materia, CSIC, Serrano 121,28006 Madrid, Spain;

    Departamento de Quimica-Fisica Aplicada, Facultad de Ciencias (UAM), 28049 Madrid, Spain;

    Departamento de Quimica-Fisica Aplicada, Facultad de Ciencias (UAM), 28049 Madrid, Spain;

    Instituto de Quimica-Fisica 'Rocasolano', CSIC, Serrano 119,28006 Madrid, Spain;

    Departamento de Quimica-Fisica Aplicada, Facultad de Ciencias (UAM), 28049 Madrid, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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