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Effect of annealing on structural and optical properties of diamond-like nanocomposite thin films

机译:退火对类金刚石纳米复合薄膜结构和光学性能的影响

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摘要

The annealing effect on structural and optical properties of the Diamond-like Nanocomposite (DLN) thin film deposited on glass substrate by Plasma Assisted Chemical Vapor Deposition (PACVD) method has been investigated. The films were annealed at temperature ranging from 300 to 600 ℃, with 100 ℃ interval for 9 minutes by rapid thermal process (RTP) under vacuum. The structural changes of the annealed films have been studied using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Scanning Electron Microscope (SEM), and optical parameters have been determined using trans-mittance and reflectance spectra in UV-UIS-NIR range. The result shows that the refractive index increases gradually from 1.79 to 2.84 with annealing temperature due to out-diffusion of H by breaking Si-H and C-H bond leads to Si-C bond, i.e. more cross linking structure. In higher temperature range, graphitization also enhanced the refractive index. However, the optical band gap at up to 400 ℃ initially increases from 3.05 to 3.20 eV and then decreases due to graphitization. The film has a great potential to be used as anti-reflection coating (ARC) on silicon-based solar cell.
机译:研究了退火对等离子辅助化学气相沉积(PACVD)法沉积在玻璃基板上的类金刚石纳米复合材料(DLN)薄膜的结构和光学性能的影响。通过真空下的快速热处理(RTP),在300至600℃的温度下以100℃的间隔对膜退火9分钟。使用傅里叶变换红外光谱(FTIR),拉曼光谱,扫描电子显微镜(SEM)研究了退火膜的结构变化,并使用UV-UIS-NIR范围内的透射光谱和反射光谱确定了光学参数。结果表明,由于H通过破坏Si-H和C-H键的向外扩散而导致Si-C键,即更多的交联结构,因此随着退火温度,折射率随着退火温度从1.79逐渐增加到2.84。在较高的温度范围内,石墨化也提高了折射率。然而,在高达400℃的光学带隙最初从3.05 eV增加到3.20 eV,然后由于石墨化而减小。该膜具有巨大的潜力,可用作硅基太阳能电池的减反射涂层(ARC)。

著录项

  • 来源
    《Applied Physics》 |2014年第3期|965-972|共8页
  • 作者单位

    Meghnad Saha Institute of Technology, Kolkata 700150, India,Center of Excellence for Green Energy and Sensor System, Bengal Engineering and Science University, Howrah 7111103, India;

    Meghnad Saha Institute of Technology, Kolkata 700150, India,Dept. of Chemistry, Bengal Engineering and Science University, Howrah 7111103, India;

    Meghnad Saha Institute of Technology, Kolkata 700150, India;

    Meghnad Saha Institute of Technology, Kolkata 700150, India;

    Meghnad Saha Institute of Technology, Kolkata 700150, India;

    Dept. of Chemistry, Bengal Engineering and Science University, Howrah 7111103, India,Center of Excellence for Green Energy and Sensor System, Bengal Engineering and Science University, Howrah 7111103, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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