Highly uniform resistive switching effect in amorphous Bi_2O_3 thin films fabricated by a low-temperature photochemical solution deposition method

摘要

Highly uniform resistive switching performance has been demonstrated in amorphous Bi_2O_3 thin films. The thin films were prepared by using a low-temperature photochemical solution deposition method simply combining chemical solution deposition and ultraviolet irradiation treatment. The Pt/Bi_2O_3/Pt memory devices exhibit reproducible resistive switching performance, uniform switching voltage, concentralized distribution of high and low resistance states, and good endurance. The conduction mechanisms of the thin films were discussed on the basis of analysis of current-voltage characteristics. The excellent resistive switching performance of the amorphous Bi_2O_3 thin films can be attributed to the reduction of -OH groups and the formation of enhanced Bi-O bonding under UV irradiation treatment, based on X-ray photo-electron spectroscopy, Fourier transform infrared spec-troscopy, and field-emission scanning electron microscopy analysis. Our study suggests that amorphous Bi_2O_3 thin films have potential applications in resistive memory, and the UV irradiation treatment is an effective method for low-temperature fabrication of some amorphous oxide thin films with good resistive switching properties, especially for flexible electronic devices.