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机译:太赫兹频率下均匀掺杂GaN基耿氏二极管负效应源的研究
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
机译:用于产生THz信号的GaN基Gunn二极管的特性
机译:GaN基Gunn二极管:其频率,功率性能和实验考虑
机译:平面GaAs基异质结构耿氏二极管中的碰撞电离电致发光:掺杂不均匀性的空间分布和影响。
机译:GaN的信号生成GaN的Gunn二极管特性研究
机译:基于异质结构的半导体纳米收缩中的耿氏效应及其在太赫兹传感中的应用。
机译:宽带隙半导体中THz瞬态激励和Gunn振荡的过冲机制
机译:延迟模式下运行的THz频率形状阳极平面孔孔二极管的研究