Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

摘要

It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading to abrupt hysteresis-type changes in the light-current and spectral characteristics. The post-threshold rise of the CTAL flux within the non-lasing parts of the active region is most likely to play significant role in the nonlinear optical phenomena observed in investigated LDs. The frequency-integrated CTAL flux density at which bleaching takes place is equal to 6.5 × 10~8 W/m~2. The hysteresis-type loop can be removed through the LD "run-in" procedure or high-temperature annealing of the LD chip in an hydrogen atmosphere.