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Thermal trimming and tuning of hydrogenated amorphous silicon nanophotonic devices

机译:氢化非晶硅纳米光子器件的热修整和调谐

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Deposited silicon and, in particular, hydrogenated amorphous silicon forms an attractive alternative platform for realizing compact photonic integrated circuits. In this paper we report on trimming (toward lower wavelengths) and tuning (toward higher wavelengths) of photonic devices through a suitable thermal treatment. The former is achieved by a material density change, the latter through the thermo-optic effect. By using Fourier transform infrared spectroscopy, a change in the hydrogen content is identified as the source of the density change. A total wavelength tuning range of 24.6 nm is achievable, which can be used for compensating fabrication imperfections.
机译:沉积的硅,尤其是氢化的非晶硅形成了一个有吸引力的替代平台,用于实现紧凑的光子集成电路。在本文中,我们报告了通过适当的热处理对光子器件进行微调(向较低波长方向)和调谐(向较高波长方向)的过程。前者是通过材料密度的变化实现的,后者是通过热光效应实现的。通过使用傅立叶变换红外光谱,氢含量的变化被识别为密度变化的来源。可以达到24.6 nm的总波长调谐范围,可用于补偿制造缺陷。

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