Nanoscale resistive memory with intrinsic diode characteristics and long endurance

摘要

We report studies on nanoscale resistive memory devices that exhibit diodelike I-V characteristics at on-state with reverse bias current suppressed to below 10-13 A and rectifying ratio ≫106. The intrinsic diodelike characteristics are robust during device operation and can survive ≫108 write/erase programming cycles. The devices can be programmed at reduced programming voltages compared to earlier studies without the initial high-voltage forming process. Multibit storage capability was also reported. The intrinsic diode characteristics provide a possible solution to suppress crosstalk in high-density crossbar memory or logic arrays particularly for those based on bipolar resistive switches (memristors).