Monitoring structural influences on quantum transport in InAs nanowires

摘要

A sample design that allows for quantum transport and transmission electron microscopy (TEM) on individual suspended nanostructures is used to investigate moderately n-type doped InAs nanowires (NWs). The nanowires were grown by metal organic vapor phase epitaxy. Universal conductance fluctuations in the nanowires are investigated at temperatures down to 0.35 K. These fluctuations show two different temperature dependences. The very same nanowire segments investigated in transport are subsequently analyzed by TEM revealing crystal phase mixing. However, we find no correspondence between the atomic structure of the wires and the temperature dependences of the conductance fluctuations.