Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

摘要

Band structure calculations of strained Ga(NAsP) quantum wells are performed within the framework of the extended-basis sp3d5s* tight-binding model. The nitrogen contribution is taken into account by introducing an additional sN orbital into the tight-binding basis. Biaxial strain effects on the band alignment of bulk Ga(NAsP) is studied for the ultra-diluted regime. We demonstrate a good agreement with experimental data both for transition energies and optical gain in Ga(NAsP) quantum wells. The effect of N incorporation in the laser active areas is simulated.