Phase transition in stoichiometric GaSb thin films: Anomalous density change and phase segregation

摘要

The crystallization of stoichiometric GaSb thin films was studied by combined in situ synchrotron techniques and static laser testing. It is demonstrated that upon crystallization, GaSb thin films exhibit an unusual behaviour with increasing thickness and concomitant decreasing mass density while its electrical resistance drops as commonly observed in phase change materials. Furthermore, beyond GaSb amorphous-to-crystalline phase transition, an elemental segregation and a separate crystallization of a pure Sb phase is evidenced.