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The Fano-type transmission and field enhancement in heterostructures composed of epsilon-near-zero materials and truncated photonic crystals

机译:ε近零材料和截短光子晶体组成的异质结构中的Fano型传输和场增强

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摘要

The Fano-type interference effect is studied in the heterostructure composed of an epsilon-near-zero (ENZ) material and a truncated photonic crystal for transverse magnetic polarized light. In the Fano-type interference effect, the ENZ material provides narrow reflection pathway and the photonic crystal provides broadband reflection pathway. The boundary condition across the ENZ interface and the confinement effect provided by the photonic crystal can enhance the electric fields in the ENZ material greatly. The field enhancements, together with the asymmetric property of Fano-type spectrum, possess potential applications for significantly lowering the threshold of nonlinear processes such as optical switching and bistability.
机译:在异质结构中研究了费诺型干涉效应,该异质结构由ε近零(ENZ)材料和用于横向磁偏振光的截断光子晶体组成。在Fano型干涉效应中,ENZ材料提供狭窄的反射路径,而光子晶体提供宽带反射路径。 ENZ界面上的边界条件和光子晶体提供的限制效应可以大大增强ENZ材料中的电场。场增强以及Fano型光谱的不对称特性,具有潜在的应用,可显着降低非线性过程的阈值,例如光开关和双稳态。

著录项

  • 来源
    《Applied Physics Letters》 |2013年第20期|1-4|共4页
  • 作者单位

    Key Laboratory of Advanced Micro-structure Materials, MOE, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China|c|;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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