Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique

摘要

By means of combining a very cost-effective lift-off process and a nanosphere lithography technique, we have fabricated two dimensional (2D) photonic crystal (PhC) structures on an InGaN/GaN multiple quantum well structure. Significant enhancement in photoluminescence (PL) intensity has been observed when the emission wavelength is within the photonic bandgap. Time-resolved PL measurements have shown that the spontaneous emission rate is strongly reduced by a factor of ～4 due to the PhC effect. As a consequence, the emission intensity along 2D PhC slab-plane directions is effectively suppressed and redistributed to the direction normal to the 2D PhC slab-plane simultaneously. Temperature-dependent PL measurements have confirmed that the enhanced PL intensity is due to an increase in extraction efficiency as a result of the PhC effect.