Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields

摘要

Because most domain wall motion (extrinsic) is arrested at high bias fields, experiments were conducted to evaluate the lattice (intrinsic) contributions to the dielectric response of lead lanthanum zirconate titanate (PLZT) at 0-100 MV/m, 213-523 K, and 1-1000 kHz. The intrinsic contribution depended weakly on bias field and frequency, while the extrinsic contribution strongly depended on these same parameters as well as temperature. The threshold bias field required to suppress domain wall motion in PLZT thin films was ∼20-25 MV/m, and the intrinsic permittivity measured at those fields was ∼300-350, in agreement with literature values.