Reproducible bipolar resistive switching in entire nitride AlN-GaN metal-insulator-semiconductor device and its mechanism

摘要

Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.