In-situ observation of self-regulated switching behavior in WO3-x based resistive switching devices

摘要

The transmittance of tungsten oxides can be adjusted by oxygen vacancy (Vo) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO3-x planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO3-x device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high Vos mobility was demonstrated in the WO3-x film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of Vos was the physical origin for such unique switching characteristics.