Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

摘要

We report the design and fabrication of W:AlO_x/WO_x bilayer based resistive switching cells in a standard 0.18?μ face='roman'>m CMOS process with only one extra mask. The devices show excellent performance with low power consumption. Low operation voltages (SET voltage?1?μ face='roman'>A. For the 0.3?μ face='roman'>m×0.3?μ face='roman'>m active area of the cell, the current density is below 1.1×103 face='roman'>A/ face='roman'>cm2, which is much smaller than previous reported results. To reveal the resistive switching mechanism, various physical analysis techniques were employed to examine the microstructures, compositions, and chemical states. Current-voltage and capacitance-voltage electrical characterizations were carried out on these devices. Based on the physical and electrical characteristics, a conductive filament formation and rupture mechanism is proposed to explain the W:AlO_x/WO_x bilayer structure resistive switching phenomena.