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Metal-semiconductor-transition observed in Bi2Ca(Sr, Ba)2Co2O8+δ single crystals

机译:在Bi 2 Ca(Sr,Ba) 2 Co 2 O 8 +δ中观察到金属半导体跃迁单晶

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Electrical property evolution of Bi2AE2Co2O8+δ single crystals (AE = Ca, Sr and Ba) is systematically explored. When AE changes from Ca to Ba, the electrical property of Bi2Ca2Co2O8+δ and Bi2Sr2Co2O8+δ demonstrates semiconductor-like properties. But Bi2Ba2Co2O8+δ shows the metallic behavior. Analysis of temperature-dependent resistance substantiates that from metallic Bi2Ba2Co2O8+δ to semiconductor-like Bi2Sr2Co2O8+δ can be attributed to Anderson localization. However the semiconductor behaviour of Bi2Sr2Co2O8+δ and Bi2Ca2Co2O8+δ is related to electronic correlations effect that is inferred by large negative magnetoresistance (∼70%). The theoretical electronic structures and valence X-ray photoemission spectroscopy substantiate that there is a relative large density of state around Fermi level in Bi2Ba2Co2O8+δ compared with other two compounds. It suggests that Bi2Ba2Co2O8+δ is more apt to be metal in this material system.
机译:Bi 2 AE 2 Co 2 O 8 +δ单晶的电学性质演化(AE = Ca,Sr和Ba)被系统地探索。当AE从Ca变为Ba时,Bi 2 Ca 2 Co 2 O 8 +δ的电性能Bi 2 Sr 2 Co 2 O 8 +δ表现出类似半导体的特性。但是Bi 2 Ba 2 Co 2 O 8 +δ表现出金属行为。温度依赖性电阻的分析证实了从金属Bi 2 Ba 2 Co 2 O 8 +δ到半导体的电阻像Bi 2 Sr 2 Co 2 O 8 +δ可以归因于安德森定位。但是Bi 2 Sr 2 Co 2 O 8 +δ和Bi 2 < / inf> Ca 2 Co 2 O 8 +δ与大负磁阻(〜70%)推断的电子相关效应有关。理论电子结构和化合价X射线光电子能谱证实,Bi 2 Ba 2 Co 2 中在费米能级附近存在相对较大的态密度。 inf> O 8 +δ与其他两种化合物相比。这表明Bi 2 Ba 2 Co 2 O 8 +δ在这种材料中更容易成为金属系统。

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