Measurement and analysis of 1/f noise under switched bias in organic thin film transistors

摘要

An understanding of 1/f noise in organic thin film transistors (OTFTs) is critical to their deployment in a range of analog and mixed signal applications. In particular, an understanding of 1/f noise behavior during switching is vital and has not been reported to date. Here, we conduct drain current noise measurements for polymer based OTFTs while the OTFT switch between accumulation mode and depletion mode. The results show that capture and emission of the carriers by/from traps within the semiconductor is the dominant mechanism of the 1/f noise in OTFTs, and the 1/f noise in OTFTs decreases when the switching signal is applied to the gate terminal.