机译:在超浅全外延金属栅极GaAs / Al_xga_(1-x)中的高电子迁移率和低噪声量子点接触作为异质结构
School of Physics University of New South Wales Sydney New South Wales 2052 Australia ARC Centre of Excellence for Future Low-Energy Electronics Technologies University of New South Wales Sydney New South Wales 2052 Australia;
School of Physics University of New South Wales Sydney New South Wales 2052 Australia ARC Centre of Excellence for Future Low-Energy Electronics Technologies University of New South Wales Sydney New South Wales 2052 Australia;
Cavendish Laboratory University of Cambridge Cambridge CB3 0HE United Kingdom;
Cavendish Laboratory University of Cambridge Cambridge CB3 0HE United Kingdom;
School of Physics University of New South Wales Sydney New South Wales 2052 Australia ARC Centre of Excellence for Future Low-Energy Electronics Technologies University of New South Wales Sydney New South Wales 2052 Australia School of Science University of New South Wales Canberra ACT 2612 Australia;
School of Physics University of New South Wales Sydney New South Wales 2052 Australia ARC Centre of Excellence for Future Low-Energy Electronics Technologies University of New South Wales Sydney New South Wales 2052 Australia;
机译:肮脏的Al_xGa_(1-x)As / GaAs / Al_xGa_(1-x)As量子阱中二维电子气的电导率和霍尔系数的量子校正:从扩散态到弹道态
机译:背栅GaAs / Al_XGa_(1-x)As量子阱中电子和空穴有效质量的增强
机译:GaAs / Al_xGa_(1-x)As双量子阱结构中结构不对称引起的尺寸量化的非单调电子迁移率
机译:在GaAs / Al_xga_(1-x)中的电子中的和跨空间散射的结构效应,如/ gaas量子阱的in_xga_(1-x)和应变
机译:将旋转偏振电子从铁和镉硒化物铁磁性触点注入砷化镓量子阱异质结构中
机译:链之间的短接触增强了共轭共聚物的发光量子产率和载流子迁移率
机译:100nm-Gaas / al_xGa_ {1-x}扫描霍尔探针的噪声特性