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A graphene quantum dot with a single electron transistor as an integrated charge sensor

机译:具有单个电子晶体管作为集成电荷传感器的石墨烯量子点

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摘要

A quantum dot u0002QDu0003 with an integrated charge sensor is becoming a common architecture for a spinnor charge based solid state qubit. To implement such a structure in graphene, we have fabricated antwin-dot structure in which the larger dot serves as a single electron transistor u0002SETu0003 to read out thencharge state of the nearby gate controlled small QD. A high SET sensitivity of 10−3ne/u0004Hz allowednus to probe Coulomb charging as well as excited state spectra of the QD, even in the regime wherenthe current through the QD is too small to be measured by conventional transport means. © 2010nAmerican Institute of Physics. u0005doi:10.1063/1.3533021
机译:具有集成电荷传感器的量子点u0002QDu0003正成为基于自旋电荷的固态量子比特的通用架构。为了在石墨烯中实现这种结构,我们制造了反点结构,其中较大的点用作单个电子晶体管,以读出附近的栅极控制的小的QD的电荷状态。即使在通过QD的电流太小以至于无法通过常规传输手段测量的情况下,其10-3ne / u0004Hz的高SET灵敏度也可以探测库仑电荷以及QD的激发态光谱。 ©2010n美国物理研究所。 u0005doi:10.1063 / 1.3533021

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  • 来源
    《Applied Physics Letters》 |2010年第26期|p.1-3|共3页
  • 作者单位

    Key Laboratory of Quantum Information, Chinese Academy of Sciences, University of Science andTechnology of China, Hefei 230026, People’s Republic of China2Department of Physics and Astronomy, University of California at Los Angeles, California 90095, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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