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How to hold a single charge carriers charge carrier transistor, the quantum dots within, and detection method
How to hold a single charge carriers charge carrier transistor, the quantum dots within, and detection method
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机译:如何保持单个电荷载流子,电荷载流子晶体管,其中的量子点以及检测方法
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摘要
A quantum wire field-effect transistor having at least one, one-dimensional, elongate conducting means (14) provided by at least a first semiconductor layer surrounded by a wider bandgap, second semiconductor layer (12, 13) and extending between source (24) and drain (26) electrodes, and in which there is provided a backgate structure (8, 23) to control conduction in the elongate conducting means. The transistor can be a Single Electron Transistor (SET) wherein two adjacent gate electrode (16, 18) are disposed over the elongate conducting means to induce a quantum dot (17) therein, and it can be made with the first semiconductor layer material as GaAs and the second semiconductor layer material as AlGaAs. A method of making the transistor involves preferentially growing the elongate conducting means at the bottom of a groove (6) lined with second semiconductor layer (12).
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