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SINGLE CHARGE CARRIER TRANSISTOR, METHOD OF HOLDING A CHARGE CARRIER WITHIN A QUANTUM DOT, AND METHOD OF DETECTION

机译:单电荷载流子晶体管,将电荷载流子保持在量子点内的方法以及检测方法

摘要

A single electron field effect transistor fabricated from a narrow band gap semi conductor (A Zener S.E.T.). The transistor is such that the valence and conduction bands have sufficiently similar energy levels such that a top region of the valence band at one point within the transistor can be forced to be higher than the bottom region of the conduction band at another point within the transistor, allowing Zener tunnelling to occur. The transistor is fabricated from semi-conductors with band gaps narrow enough to allow this to occur, for instance InSb and InAISb, CdTe and Cd x Hg 1-x Te.
机译:由窄带隙半导体(A Zener S.E.T.)制成的单电子场效应晶体管。晶体管的价带和导带具有足够相似的能级,从而可以迫使晶体管内一个点的价带的顶部区域高于晶体管内另一点的导带的底部区域。 ,允许进行齐纳隧穿。该晶体管由带隙足够窄的半导体制成,以使这种情况发生,例如InSb和InAISb,CdTe和Cd x Hg 1-x Te。

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