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Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

机译:GaAs纳米线热导率的微拉曼光谱研究与激光加热相结合

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摘要

The thermal properties of freely suspended GaAs nanowires are investigated by applying a methodnwhich relies on laser heating and the determination of the local temperature by Raman spectroscopy.nIn order to determine the values for the thermal conductivity u0002, the fraction of the laser powernabsorbed inside the GaAs nanowire is estimated by numerical simulations. The thermal conductivitynof nanowires with homogeneous diameter is found to lie in the range of 8–36 W m−1nK−1n. Thenchange of the temperature profile in the presence of a tapering was investigated. Furthermore, wendiscuss the influence of laser heating in ambient conditions on the value of u0002.© 2010 AmericannInstitute of Physics. u0004doi:10.1063/1.3532848
机译:通过应用一种依靠激光加热并通过拉曼光谱法确定局部温度的方法来研究自由悬浮的GaAs纳米线的热性能.n为了确定导热系数u0002的值,激光功率在GaAs内部吸收的比例纳米线是通过数值模拟估算的。发现具有均一直径的纳米线的热导率n在8–36 W m-1nK-1n的范围内。然后研究了在逐渐变细的情况下温度曲线的变化。此外,本文还讨论了在环境条件下激光加热对u0002值的影响。©2010 AmericannInstitute of Physics。 u0004doi:10.1063 / 1.3532848

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  • 来源
    《Applied Physics Letters》 |2010年第26期|p.1-3|共3页
  • 作者单位

    Physik Department and Walter Schottky Institut, Technische Universität München, Am Coulombwall 3,D-85748 Garching, Germany2Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale deLausanne, CH-1015 Lausanne, Switzerland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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