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Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

机译：GaAs纳米线热导率的微拉曼光谱研究与激光加热相结合

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摘要

The thermal properties of freely suspended GaAs nanowires are investigated by applying a method which relies on laser heating and the determination of the local temperature by Raman spectroscopy. In order to determine the values for the thermal conductivity k, the fraction of the laser power absorbed inside the GaAs nanowire is estimated by numerical simulations. The thermal conductivity of nanowires with homogeneous diameter is found to lie in the range of 8-36 W m~(-1) K~(-1). The change of the temperature profile in the presence of a tapering was investigated. Furthermore, we discuss the influence of laser heating in ambient conditions on the value of k.
机译：通过应用一种依靠激光加热和通过拉曼光谱法确定局部温度的方法，研究了自由悬浮的GaAs纳米线的热性能。为了确定热导率k的值，通过数值模拟估算了GaAs纳米线内部吸收的激光功率的比例。发现具有均一直径的纳米线的导热率在8-36 W m〜（-1）K〜（-1）的范围内。研究了在逐渐变细的情况下温度曲线的变化。此外，我们讨论了在环境条件下激光加热对k值的影响。

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  • 来源
    《Applied Physics Letters》 |2010年第26期|p.263107.1-263107.3|共3页
  • 作者

    Martin Soini; Maria Zardo; Emanuele Uccelli; Stefan Funk; Gregor Koblmueller; Anna Fontcuberta i Morral; Gerhard Abstreiter;

  • 作者单位

    Physik Department and Walter Schottky Institut, Technische Universitdt Munchen, Am Coulombwall 3, D-85748 Garching, Germany;

    rnPhysik Department and Walter Schottky Institut, Technische Universitdt Munchen, Am Coulombwall 3, D-85748 Garching, Germany;

    rnPhysik Department and Walter Schottky Institut, Technische Universitdt Munchen, Am Coulombwall 3, D-85748 Garching, Germany,Laboratoire des Matiriaux Semiconducteurs, Institut des Matiriaux, Ecole Polytechnique Fidirale de Lausanne, CH-1015 Lausanne, Switzerland;

    rnPhysik Department and Walter Schottky Institut, Technische Universitdt Munchen, Am Coulombwall 3, D-85748 Garching, Germany;

    rnPhysik Department and Walter Schottky Institut, Technische Universitdt Munchen, Am Coulombwall 3, D-85748 Garching, Germany;

    rnPhysik Department and Walter Schottky Institut, Technische Universitdt Munchen, Am Coulombwall 3, D-85748 Garching, Germany,Laboratoire des Matiriaux Semiconducteurs, Institut des Matiriaux, Ecole Polytechnique Fidirale de Lausanne, CH-1015 Lausanne, Switzerland;

    rnPhysik Department and Walter Schottky Institut, Technische Universitdt Munchen, Am Coulombwall 3, D-85748 Garching, Germany;

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