Lateral ordering, strain, and morphology evolution of InGaAs/GaAs(001) quantum dots due to high temperature postgrowth annealing

摘要

The effect of postgrowth annealing on shape and ordering of a single layer of InGaAs/GaAsu0001001u0002nquantum dots is investigated by three dimensional grazing incidence small angle x-ray scattering. Antransition from disordered dots to two-dimensional lateral ordering is found. This transition isnaccompanying a quantum dot shape transformation. Grazing incidence diffraction measurementsnrelate the observed ordering type to strain driven self organization. The role of different growthnconditions leading to lateral correlation is discussed by comparing the results to recent experimental