Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

摘要

Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low-frequencynnoise for determining the ultimate detection limit. In this letter, the 1/ f-type noise of Si nanoribbonnfield-effect sensors is investigated.We demonstrate that the signal-to-noise ratio can be increased bynalmost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage range. Innthis case, the additional noise contribution from the contact regions is minimized, and an accuracynof 0.5‰ of a pH shift in 1 Hz bandwidth can be reached.