Toward high voltage radio frequency devices in β-Ga_2O_3

摘要

The path to achieving integrated RF and power conversion circuitry using the β-Ga_2O_3 material system is described with regard to the materials high Johnson's RF figure of merit. Recent results, including large signal data at V_D = 50 V, are provided, showing progress in achieving high-voltage RF operation. Additionally, progress in achieving high-gain devices through gate length scaling is also benchmarked by a record RF power device with a gate length of 0.5 μm achieving a 2.1 GHz μm f_T - L_G product. These results are compared with state-of-the-art RF devices, and the expectations for β-Ga_2O_3 at this point in its maturity throughout this Letter with future milestones laid out to measure progress. The conclusion includes near- and long-term projections for β-Ga_2O_3 devices for RF based on the results and projected milestones presented.