机译:具有Semipolar(20-21)微发光的高偏振和快速调制速度从半极(20-21)微发光二极管,氧化铟锡表面光栅
Materials Department University of California Santa Barbara California 93106 USA;
Department of Electrical and Computer Engineering University of California Santa Barbara California 93106 USA;
Department of Electrical and Computer Engineering University of California Santa Barbara California 93106 USA;
Department of Electrical Engineering Yale University New Haven Connecticut 06520 USA;
Materials Department University of California Santa Barbara California 93106 USA Department of Electrical and Computer Engineering University of California Santa Barbara California 93106 USA;
Materials Department University of California Santa Barbara California 93106 USA Department of Electrical and Computer Engineering University of California Santa Barbara California 93106 USA;
机译:具有一阶铟锡氧化物表面光栅的半极性IngaN分布式反馈蓝色激光二极管的连续波操作
机译:偏光的单片白色半(20-21)INGAN在高质量(20-21)GAN / SAPPHIRE模板上生长的发光二极管及其在可见光通信中的应用
机译:铟成分增加的半极性(1122)Ingan / gan发光二极管上的偏振比增加
机译:带有铟锡氧化物表面光栅的半极性Ⅲ族氮化物分布式反馈蓝色激光二极管
机译:1.3微米铟镓砷磷半导体二极管激光器的空间分辨和极化分辨电致发光。
机译:自旋极化发光二极管在室温下进行纯圆极化电致发光
机译:高质量的Semipolar GaN / Sapphire模板中生长高效的半极性IngaN长波长发光二极管和蓝色激光二极管的研制