机译:电子辐射和快速热退火对高斯内布合金的光致发光的影响
National Institute for Research and Development in Microtechnologies Erou lancu Nicolae 126 A 077190 Voluntari Romania Faculty of Exact Sciences and Engineering Hyperion University Calea Calarasilor 169 Bucharest Romania;
National Institute for Research and Development in Microtechnologies Erou lancu Nicolae 126 A 077190 Voluntari Romania;
Department of Materials Science and Engineering University of Michigan Ann Arbor Michigan 48109-2136 USA;
National Institute for Laser Plasma and Radiation Physics 077125 Bucharest Romania;
National Institute for Research and Development in Microtechnologies Erou lancu Nicolae 126 A 077190 Voluntari Romania;
National Institute for Research and Development in Microtechnologies Erou lancu Nicolae 126 A 077190 Voluntari Romania;
Department of Electrical and Electronic Information Engineering Toyohashi University of Technology Toyohashi Aichi 441-8580 Japan;
Department of Electrical and Electronic Information Engineering Toyohashi University of Technology Toyohashi Aichi 441-8580 Japan;
Department of Materials Science and Engineering University of Michigan Ann Arbor Michigan 48109-2136 USA;
机译:GaInNAs / GaAs量子阱的电子辐照增强光致发光
机译:Ga浓度和快速热退火对掺杂Ga的ZnO薄膜的结构,光电和光致发光性能的影响
机译:快速热退火温度对氮化硅膜中嵌入的Tb离子的光致发光的影响
机译:电子辐照对增益/ GaAs量子阱光致发光的影响
机译:快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
机译:快速注热退火后注入低通量Si +的SiO2薄膜在室温下的光致发光位移
机译:简单,低成本和良性溶胶 - 凝胶Cu2InxZn1-Xsnsnoloy薄膜的合成:不同快速热退火条件及其光伏太阳能电池的影响