Deposition of carbon-containing hole injection layers on p-type Al_(0.8)Ga_(0.2)N grown by metalorganic vapor phase epitaxy

摘要

A carbon-containing amorphous film is deposited on metalorganic-vapor-phase-epitaxy-grown AlN or AlGaN templates by flowing propane, aluminum, and nitrogen gases at 1010°C. The deposited ～1-nm-thick layers show p-type conductivity with a sheet carrier density of ～1 × 10~(13)cm~(-2). When the film is deposited on Mg-doped Al_(0.8)Ga_(0.2)N prior to metallization, it acts as a hole injection layer into p-type AlGaN and shows nearly a double increase in hole current. The transmittance of the deposited layer is ～90% in the 200-400-nm wavelength range. Hence, the deposited layer is a promising hole injection layer into high-Al-content p-type AlGaN.